BUK9Y40-55B/C,115 NXP Semiconductors, BUK9Y40-55B/C,115 Datasheet - Page 6

• Manufacturer Part Number: BUK9Y40-55B/C,115
• Description: MOSFET N-CH 55V 26A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y40-55B/C,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 25V
• Power - Max: 59W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
BUK9Y40-55B_3
Product data sheet
Fig 6. Output characteristics: drain current as a
Fig 8. Sub-threshold drain current as a function of
(A)
(A)
I
I
10
10
10
10
10
10
D
D
60
40
20
−1
−2
−3
−4
−5
−6
0
T
T
function of drain-source voltage; typical values
gate-source voltage
0
0
j
j
= 25 °C; t
= 25 °C;V
2
V
p
DS
GS
= 300 s
min
(V) = 10
= V
1
GS
4
typ
6
2
max
V
GS
8
6.0
5.0
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
V
DS
(V)
03np10
03ng53
(V)
Rev. 03 — 22 February 2008
10
3
Fig 7. Drain-source on-state resistance as a function
Fig 9. Forward transconductance as a function of
R
(mΩ)
DSon
(S)
g
fs
50
40
30
20
30
25
20
15
10
T
T
of gate-source voltage; typical values
drain current; typical values
0
0
j
j
= 25 °C; I
= 25 °C;V
N-channel TrenchMOS logic level FET
D
DS
4
= 15 A
= 25V
5
BUK9Y40-55B
8
10
12
V
© NXP B.V. 2008. All rights reserved.
GS
I
D
(V)
(A)
03np09
03np07
15
16
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