RQ1E050RPTR Rohm Semiconductor, RQ1E050RPTR Datasheet - Page 3

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RQ1E050RPTR

Manufacturer Part Number
RQ1E050RPTR
Description
MOSFET P-CH 30V 5A TSMT8
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet

Specifications of RQ1E050RPTR

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
31 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
13nC @ 5V
Input Capacitance (ciss) @ Vds
1300pF @ 10V
Power - Max
1.5W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RQ1E050RPTR
Quantity:
9 000
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
 Electrical characteristic curves
RQ1E050RP
1000
1000
100
100
5
4
3
2
1
0
10
10
1
1
Fig.4 Static Drain-Source On-State
0
0.1
0.1
Fig.7 Static Drain-Source On-State
Ta=25°C
Pulsed
V
Pulsed
Fig.1 Typical Output Characteristics( Ⅰ)
DRAIN-SOURCE VOLTAGE : -V
GS
DRAIN-CURRENT : -I
Resistance vs. Drain Current(Ⅰ)
= -4.0V
0.2
DRAIN-CURRENT : -I
Resistance vs. Drain Current(Ⅳ)
V
GS
0.4
V
V
= -3.0V
GS
GS
= -4.5V
= -4.0V
V
1
1
GS
0.6
= -10V
Ta= -25°C
V
V
V
Ta=125°C
D
V
V
Ta=75°C
Ta=25°C
[A]
GS
GS
GS
GS
GS
= -4.0V
= -4.5V
= -10V
D
Ta=25°C
Pulsed
= -2.8V
= -2.5V
[A]
0.8
DS
[V]
10
10
1
1000
100
5
4
3
2
1
0
0.1
10
10
1
1
0
0.01
Fig.2 Typical Output Characteristics( Ⅱ)
0.1
Fig.5 Static Drain-Source On-State
DRAIN-SOURCE VOLTAGE : -V
V
Pulsed
V
Pulsed
GS
V
DS
Fig.8 Forward Transfer Admittance
GS
= -10V
= -10V
2
= -3.0V
DRAIN-CURRENT : -I
Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : -I
vs. Drain Current
V
V
V
0.1
GS
GS
GS
4
= -10V
= -4.5V
= -4.0V
V
GS
3/5
= -2.8V
1
6
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
1
GS
= -2.5V
Ta=25°C
Pulsed
D
8
D
[A]
[A]
DS
[V]
10
10
10
0.001
1000
0.01
100
0.01
0.1
0.1
10
10
10
1
1
1
Fig.6 Static Drain-Source On-State
0.1
0
0
V
Pulsed
V
Pulsed
V
Pulsed
Fig.3 Typical Transfer Characteristics
DS
Ta= - 25°C
Ta= 125°C
GATE-SOURCE VOLTAGE : -V
GS
DRAIN-CURRENT : -I
GS
SOURCE-DRAIN VOLTAGE : -V
Ta= 75°C
Ta= 25°C
Resistance vs. Drain Current(Ⅲ)
= -10V
= -4.5V
=0V
Fig.9 Reverse Drain Current
0.5
1
vs. Sourse-Drain Voltage
1
2010.07 - Rev.A
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
D
1
[A]
2
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Data Sheet
GS
SD
[V]
1.5
10
[V]
3

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