STL75N8LF6 STMicroelectronics, STL75N8LF6 Datasheet - Page 4

• Manufacturer Part Number: STL75N8LF6
• Description: MOSFET N-CH 80V 75A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL75N8LF6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.4 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 125nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8900pF @ 25V
• Power - Max: 80W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11252-2

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 5.
Table 6.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
C
I
I
C
GS(th)
DS(on)
C
Q
Q
DSS
GSS
R
Q
oss
rss
iss
gs
gd
G
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source breakdown
voltage (V
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
GS
= 0)
= 0)
Doc ID 018820 Rev 2
V
V
V
V
(see Figure 14)
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
I
V
V
V
V
V
V
D
DS
GS
DD
GS
DS
DS
GS
DS
GS
GS
= 250 µA
=0
= 40 V, I
= V
= 10 V, I
= 5 V, I
= 25 V, f=1 MHz,
= 4.5 V
= 80 V,
= 80 V, T
= +20 / -16 V
Test conditions
Test conditions
GS
, I
D
D
D
D
= 9 A
C
= 9 A
= 250 µA
= 18 A
= 125 °C
Min.
Min.
80
1
-
-
-
Typ.
6895
5.6
Typ.
1.52
516
207
6
51
14
17
STL75N8LF6
Max.
Max.
±
7.4
8.2
100
10
-
-
-
1
Unit
nC
nC
nC
Unit
pF
pF
pF
mΩ
mΩ
Ω
µA
µA
nA
V
V