MTP3055E STMicroelectronics, MTP3055E Datasheet - Page 2

• Manufacturer Part Number: MTP3055E
• Description: MOSFET Power TO-220 N-CH 60V 14A
• Manufacturer: STMicroelectronics

Specifications of MTP3055E

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: No

MTP3055E
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
DYNAMIC
2/8
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
Rthc-s
(BR)DSS
g
I
I
C
I
E
GS(th)
DS(on)
D(on)
C
C
fs
I
DSS
GSS
AR
T
oss
AS
iss
rss
(1)
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25°C, I
= 0)
GS
= 0)
D
Parameter
=I
AR,
jmax
V
)
DD
CASE
= 25 V
I
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
DS>
DS
= 250 µA, V
V
= 25 °C UNLESS OTHERWISE SPECIFIED)
= I
DS
= Max Rating
= Max Rating x 0.8, T
= V
= ±20V
= 10 V, I
I
D(on) X
D(on) X
= 25 V, f = 1 MHz, V
GS
Test Conditions
Test Conditions
Test Conditions
, I
D
D
R
R
GS
= 250 µA
DS(on)max
= 7 A
DS(on)max ,
= 0
V
GS
I
C
D
= 125 °C
GS
= 6 A
= 10V
= 0
Max Value
3.75
62.5
300
0.5
Min.
Min.
Min.
12
50
60
12
2
4
Typ.
Typ.
Typ.
760
100
2.9
0.1
30
6
Max.
±100
Max.
Max.
0.15
10
1
4
°C/W
°C/W
°C/W
Unit
mJ
°C
Unit
Unit
Unit
A
µA
µA
nA
pF
pF
pF
V
V
A
S