BUK95150-55A NXP Semiconductors, BUK95150-55A Datasheet - Page 6

• Manufacturer Part Number: BUK95150-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK95150-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 13 A
• Power Dissipation: 53 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK95150-55A,127

NXP Semiconductors
BUK95150-55A
Product data sheet
Fig 7.
Fig 9.
Fig 11. Forward transconductance as a function of
R
(mΩ)
DS(on)
(A)
g
(S)
I
D
fs
100
80
60
40
20
32
30
28
26
24
22
25
20
15
10
0
5
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
drain current; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
V
0
3
0
j
j
DS
7.5
7.0
6.5
6.0
V
= 25 °C
= 25 °C; I
GS
> I
(V) = 10
5
D
2
x R
5
10
D
DSon
= 13 A
4
15
7
20
6
25
9
5.0
4.4
3.8
3.4
3.0
2.6
All information provided in this document is subject to legal disclaimers.
8
V
003aaf405
V
003aaf407
003aaf409
GS
30
DS
I
5.5
4.8
4.0
3.6
3.2
2.8
2.4
(V)
D
(V)
(A)
10
35
11
Rev. 02 — 21 April 2011
Fig 8.
Fig 10. Transfer characteristics: drain current as a
Fig 12. Normalized drain-source on-state resistance
R
(A)
(mΩ)
I
DS(on)
D
a
3.0
2.5
2.0
1.5
1.0
0.5
40
35
30
25
20
70
60
50
40
30
20
10
0
-100
of drain current; typical values
function of gate-source voltage; typical values
factor as a function of junction temperature
T
Drain-source on-state resistance as a function
V
0
0
j
DS
V
3.0
3.2
3.4
3.6
4.0
5.0
= 25 °C
GS
> I
(V) =
1
N-channel TrenchMOS logic level FET
D
x R
20
2
T
DSon
j
0
= 175 °C
BUK95150-55A
3
40
4
100
T
j
5
= 25 °C
60
T
© NXP B.V. 2011. All rights reserved.
mb
I
003aaf406
003aaf408
003aaf410
D
(°C)
6
V
(A)
GS
(V)
200
80
7
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