SI3446DV-T1-E3 Vishay

SI3446DV-T1-E3

Manufacturer Part Number

SI3446DV-T1-E3

Description

MOSFET Power 20V 5.3A 2W

Manufacturer

Vishay

Specifications of SI3446DV-T1-E3

Configuration

Single Quad Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.045 Ohms

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

5.3 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TSOP

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI3446DV-T1-E3

Manufacturer:

VISHAY

Quantity:

2 500

Company:

HardFindElectronics Ltd

Part Number:

SI3446DV-T1-E3

Manufacturer:

VISHAY

Quantity:

150

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI3446DV-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Related parts for SI3446DV-T1-E3

Related keywords

SI3446DV-T1-E3 component
SI3446DV-T1-E3 part
SI3446DV-T1-E3 distributor
SI3446DV-T1-E3 RoHS