SI3446DV-T1 Vishay, SI3446DV-T1 Datasheet
SI3446DV-T1
Manufacturer Part Number
SI3446DV-T1
Description
MOSFET Power 20V 5.3A 2W
Manufacturer
Vishay
Datasheet
1.SI3446DV-T1.pdf
(5 pages)
Specifications of SI3446DV-T1
Configuration
Single Quad Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3446DV-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI3446DV-T1-E3
Manufacturer:
VISHAY
Quantity:
2 500
Part Number:
SI3446DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3446DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70715
S-51451—Rev. C, 01-Aug-05
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t v 5 sec.
DS
20
20
(V)
Ordering Information: Si3446DV-T1
0.065 @ V
J
J
a
a
0.045 @ V
= 150_C)
= 150_C)
a
r
DS(on)
3 mm
Parameter
Parameter
GS
GS
a
a
N-Channel 2.5-V (G-S) MOSFET
= 2.5 V
(W)
= 4.5 V
Si3446DV-T1–E3 (Lead (Pb)–free)
a
1
2
3
Top View
TSOP-6
2.85 mm
6
5
4
I
D
5.3
4.4
(A)
_
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
(3) G
Symbol
Symbol
D TrenchFETr Power MOSFET
D 100% R
T
R
N-Channel MOSFET
V
V
J
I
P
P
, T
DM
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
(1, 2, 5, 6) D
(4) S
g
Tested
–55 to 150
Vishay Siliconix
Limit
Limit
"12
62.5
5.3
4.2
1.7
2.0
1.3
20
20
Si3446DV
www.vishay.com
Unit
Unit
RoHS
_C/W
_C
W
W
V
V
A
A
1
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