BUK9520-55 NXP Semiconductors, BUK9520-55 Datasheet - Page 7

• Manufacturer Part Number: BUK9520-55
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9520-55

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 52 A
• Power Dissipation: 116 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9520-55,127

Philips Semiconductors
MECHANICAL DATA
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
April 1998
TrenchMOS
Logic level FET
Dimensions in mm
Net Mass: 2 g
damage to MOS gate oxide.
transistor
not tinned
3,0 max
max
(2x)
1,3
Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.
1 2 3
2,54 2,54
10,3
max
3,7
7
3,0
2,8
0,9 max (3x)
13,5
min
1,3
4,5
max
Product specification
BUK9520-55
min
5,9
2,4
0,6
Rev 1.100
15,8
max