NE8500295-6 NEC
NE8500295-6
Manufacturer Part Number
NE8500295-6
Description
MOSFET Power 2W C Band MESFET
Manufacturer
NEC
Specifications of NE8500295-6
Forward Transconductance Gfs (max / Min)
0.6 S
Drain-source Breakdown Voltage
18 V
Gate-source Breakdown Voltage
18 V
Continuous Drain Current
2.5 A
Power Dissipation
13 W
Mounting Style
SMD/SMT
Package / Case
CHIP
Lead Free Status / Rohs Status
No
Related parts for NE8500295-6
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
16/8 bit single-chip microcomputer
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
Dual audio power amp circuit
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
Dual comparator
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
MOS type composite field effect transistor
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
50 V/100 mA FET array incorporating 2 N-ch MOSFETs
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
6-pin small MM high-frequency double transistor
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
6-pin small MM high-frequency double transistor
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
6-pin small MM high-frequency double transistor
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
6-pin small MM high-frequency double transistor
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
Twin transistors equipped with different model chips(6P small MM)
Manufacturer:
NEC
Datasheet:
Part Number:
Description:
Bipolar analog integrated circuit
Manufacturer:
NEC
Datasheet: