BLA0912-250 NXP Semiconductors, BLA0912-250 Datasheet - Page 3
BLA0912-250
Manufacturer Part Number
BLA0912-250
Description
MOSFET Power LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLA0912-250.pdf
(13 pages)
Specifications of BLA0912-250
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 22 V
Power Dissipation
700 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Package / Case
SOT-502
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
Details
Other names
BLA0912-250,112
Available stocks
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Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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Quantity:
12 400
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Part Number:
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Manufacturer:
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Part Number:
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Manufacturer:
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Company:
Part Number:
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Quantity:
5 000
Company:
Part Number:
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Manufacturer:
NXP
Quantity:
1 400
NXP Semiconductors
6. Characteristics
BLA0912-250
Product data sheet
6.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
RF performance in common source class-AB circuit; T
specified.
The BLA0912-250 is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: V
f = 960 MHz to 1215 MHz at rated load power.
Symbol Parameter
V
V
I
I
I
g
R
Symbol
V
f
P
G
η
Z
T
P
α
t
t
DSS
DSX
GSS
r
f
j
fs
D
th(j-h)
h
resp(sp)
(BR)DSS
GS(th)
DS
L
droop(pulse)
DS(on)
p
= 25
°
C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
DC characteristics
RF characteristics
Parameter
drain-source voltage
frequency
output power
power gain
drain efficiency
transient thermal impedance
from junction to heatsink
heatsink temperature
pulse droop power
spurious response
rise time
fall time
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 November 2010
Conditions
V
V
V
V
V
V
Conditions
t
P
t
t
t
VSWR
GS
DS
GS
GS
DS
GS
DS
GS
p
p
p
p
L
= 100 μs; δ = 10 %
= 100 μs; δ = 10 %
= 100 μs; δ = 10 %
= 100 μs; δ = 10 %
= 250 W
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 20 V; V
= 9 V; I
load
GSth
h
= 25
D
D
= 2 : 1
+ 9 V;
DS
D
D
= 3 mA
= 10 A
DS
= 300 mA
= 10 A
= 36 V
°
C; Z
= 0 V
th
Avionics LDMOS transistor
BLA0912-250
= 0.15 K/W; unless otherwise
Min
-
960
250
12
40
-
−55
-
-
-
-
Min
75
4
-
45
-
-
-
DS
= 36 V;
Typ
-
-
-
13
50
-
-
0.1
-
25
6
© NXP B.V. 2010. All rights reserved.
Typ
-
-
-
-
-
9
60
Max
36
1215
0.2
+70
0.5
−60
50
25
Max Unit
-
5
1
-
1
-
-
Unit
V
MHz
W
dB
%
K/W
°C
dB
dBc
ns
ns
3 of 13
V
V
μA
A
μA
S
mΩ