PHP119NQ06T NXP Semiconductors

MOSFET Power TRENCHMOS (TM)FET

PHP119NQ06T

Manufacturer Part Number
PHP119NQ06T
Description
MOSFET Power TRENCHMOS (TM)FET
Manufacturer
NXP Semiconductors

Specifications of PHP119NQ06T

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0071 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
PHP119NQ06T,127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHP119NQ06T
Manufacturer:
NXP
Quantity:
24 000
Part Number:
PHP119NQ06T
Manufacturer:
NXP
Quantity:
12 500

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