PHP119NQ06T NXP Semiconductors
![MOSFET Power TRENCHMOS (TM)FET](/photos/16/4/160465/to3_sml.jpg)
PHP119NQ06T
Manufacturer Part Number
PHP119NQ06T
Description
MOSFET Power TRENCHMOS (TM)FET
Manufacturer
NXP Semiconductors
Specifications of PHP119NQ06T
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0071 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Other names
PHP119NQ06T,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PHP119NQ06T
Manufacturer:
NXP
Quantity:
24 000
Company:
Part Number:
PHP119NQ06T
Manufacturer:
NXP
Quantity:
12 500