PTFA210301E V2 Infineon Technologies
![MOSFET Power RFP-LDMOS GOLDMOS 8 30 W](/photos/27/8/270839/h306252_sml.jpg)
PTFA210301E V2
Manufacturer Part Number
PTFA210301E V2
Description
MOSFET Power RFP-LDMOS GOLDMOS 8 30 W
Manufacturer
Infineon Technologies
Specifications of PTFA210301E V2
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
- 0.5 V, + 12 V
Continuous Drain Current
10 uA
Power Dissipation
145 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
30265
Minimum Operating Temperature
- 40 C
Lead Free Status / Rohs Status
Details