PTFA210301E V2 Infineon Technologies

MOSFET Power RFP-LDMOS GOLDMOS 8 30 W

PTFA210301E V2

Manufacturer Part Number

PTFA210301E V2

Description

MOSFET Power RFP-LDMOS GOLDMOS 8 30 W

Manufacturer

Infineon Technologies

Specifications of PTFA210301E V2

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.23 Ohms

Drain-source Breakdown Voltage

65 V

Gate-source Breakdown Voltage

- 0.5 V, + 12 V

Continuous Drain Current

10 uA

Power Dissipation

145 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

30265

Minimum Operating Temperature

- 40 C

Lead Free Status / Rohs Status

Details

Related parts for PTFA210301E V2

Related keywords

PTFA210301E V2 component
PTFA210301E V2 part
PTFA210301E V2 distributor
PTFA210301E V2 RoHS