STP11NB40 STMicroelectronics, STP11NB40 Datasheet - Page 6

• Manufacturer Part Number: STP11NB40
• Description: MOSFET Power N-Ch 400 Volt 11 Amp
• Manufacturer: STMicroelectronics

Specifications of STP11NB40

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.48 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.7 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: No

STP11NB40/FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit