BSC091N03MSC G Infineon Technologies
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BSC091N03MSC G
Manufacturer Part Number
BSC091N03MSC G
Description
MOSFET Power N-KANAL POWER MOS
Manufacturer
Infineon Technologies
Specifications of BSC091N03MSC G
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0091 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TDSON
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Other names
BSC091N03MSCGXT