IPD50N06S3L-08 Infineon Technologies
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IPD50N06S3L-08
Manufacturer Part Number
IPD50N06S3L-08
Description
MOSFET Power OPTIMOS-T N-CH 55V 50A 7.8mOhms
Manufacturer
Infineon Technologies
Specifications of IPD50N06S3L-08
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0078 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
50 A
Power Dissipation
107 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Other names
IPD50N06S3L08XT