IPI06CNE8N G Infineon Technologies

no-image

IPI06CNE8N G

Manufacturer Part Number

IPI06CNE8N G

Description

MOSFET Power N-CH 85V 100A

Manufacturer

Infineon Technologies

Specifications of IPI06CNE8N G

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0065 Ohms

Drain-source Breakdown Voltage

85 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Power Dissipation

214 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-262

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Other names

IPI06CNE8NGXK

Related parts for IPI06CNE8N G

Related keywords

IPI06CNE8N G component
IPI06CNE8N G part
IPI06CNE8N G distributor
IPI06CNE8N G RoHS