IPB051NE8N G Infineon Technologies
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
IPB051NE8N G
Manufacturer Part Number
IPB051NE8N G
Description
MOSFET Power OptiMOS 2 PWR TRANST 85V 100A
Manufacturer
Infineon Technologies
Specifications of IPB051NE8N G
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0051 Ohms
Drain-source Breakdown Voltage
85 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Other names
IPB051NE8NGXT