BSC049N03MSC G Infineon Technologies

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BSC049N03MSC G

Manufacturer Part Number
BSC049N03MSC G
Description
MOSFET Power N-KANAL POWER MOS
Manufacturer
Infineon Technologies

Specifications of BSC049N03MSC G

Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0049 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TDSON
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BSC049N03MSCGXT

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