PSMN3R7-30YLC,115 NXP Semiconductors, PSMN3R7-30YLC,115 Datasheet - Page 9
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PSMN3R7-30YLC,115
Manufacturer Part Number
PSMN3R7-30YLC,115
Description
MOSFET Power N-Ch 30V 3.95mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN3R7-30YLC115.pdf
(15 pages)
Specifications of PSMN3R7-30YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.95 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
79 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
29 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.95 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1848pF @ 15V
Power - Max
79W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065194115
NXP Semiconductors
PSMN3R7-30YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
(mΩ)
R
DS on
16
12
8
4
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
20
Q
GS1
2.8
I
Q
D
GS
40
Q
GS2
Q
G(tot)
3.0
60
Q
GD
N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower
V
GS
80
All information provided in this document is subject to legal disclaimers.
003a a f 682
003aaa508
(V) =
I
D
(A)
3.5
4.5
10
100
Rev. 01 — 2 May 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
10
0
PSMN3R7-30YLC
V
DS
60
20
V
= 6V
GS
15V
=10V
24V
120
30
© NXP B.V. 2011. All rights reserved.
003a a f 683
003a a f 689
Q
T
G
4.5V
j
(°C)
(nC)
180
40
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