PSMN1R9-25YLC,115 NXP Semiconductors, PSMN1R9-25YLC,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN1R9-25YLC,115
• Description: MOSFET Power N-Ch 25V 2.05 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN1R9-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.05 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 141 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 57 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.05 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 3504pF @ 12V
• Power - Max: 141W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065201115

NXP Semiconductors
PSMN1R9-25YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
(S )
I
g
10
D
10
10
10
10
10
200
160
120
fs
80
40
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
1
Min
40
Typ
60
Max
2
80
V
All information provided in this document is subject to legal disclaimers.
003a a f 834
003a a f 833
GS
I
D
(V)
(A)
100
3
Rev. 1 — 2 May 2011
N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
GS (th)
(V)
I
D
100
80
60
40
20
3
2
1
0
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
T
j
= 150 °C
0
1
PSMN1R9-25YLC
I
D
= 5mA
60
2
1mA
T
j
= 25 °C
120
3
© NXP B.V. 2011. All rights reserved.
V
003a a f 836
003a a f 832
GS
T
j
(°C)
(V)
180
4
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