PSMN1R7-25YLC,115 NXP Semiconductors, PSMN1R7-25YLC,115 Datasheet - Page 12
![MOSFET Power N-Ch 25V 1.9 mOhms](/photos/16/8/160846/nxp_lfpak_sml.jpg)
PSMN1R7-25YLC,115
Manufacturer Part Number
PSMN1R7-25YLC,115
Description
MOSFET Power N-Ch 25V 1.9 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN1R7-25YLC115.pdf
(15 pages)
Specifications of PSMN1R7-25YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.9 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
164 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
59 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.9 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
3735pF @ 12V
Power - Max
164W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065198115
NXP Semiconductors
9. Revision history
Table 8.
PSMN1R7-25YLC
Product data sheet
Document ID
PSMN1R7-25YLC v.1
Revision history
20110502
Release date
N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Rev. 01 — 2 May 2011
Change notice
-
PSMN1R7-25YLC
Supersedes
-
© NXP B.V. 2011. All rights reserved.
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