BSB014N04LX3G Infineon Technologies

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BSB014N04LX3G

Manufacturer Part Number

BSB014N04LX3G

Description

MOSFET Power N-KANAL POWER MOS

Manufacturer

Infineon Technologies

Specifications of BSB014N04LX3G

Configuration

Single Quad Drain Dual Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0014 Ohms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

36 A

Power Dissipation

2.8 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

CanPAK

Minimum Operating Temperature

- 40 C

Lead Free Status / Rohs Status

Details

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