DMG5802LFX-7 Diodes Inc, DMG5802LFX-7 Datasheet - Page 3

• Manufacturer Part Number: DMG5802LFX-7
• Description: MOSFET Power Dual N-Ch 24V Mosfet 0.98W PD
• Manufacturer: Diodes Inc
• Series: -r

Specifications of DMG5802LFX-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 31.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 1066.4pF @ 15V
• Power - Max: 980mW
• Mounting Type: Surface Mount
• Package / Case: 6-VFDFN Exposed Pad
• Lead Free Status / Rohs Status: Details

DMG5802LFX
Document number: DS35009 Rev. 2 - 2
0.05
0.04
0.03
0.02
0.01
20
16
12
1.6
1.4
1.2
1.0
0.8
0.6
8
4
0
0
0
-50 -25
0
Fig. 5 On-Resistance Variation with Temperature
V , DRAIN-SOURCE VOLTAGE (V)
V
DS
Fig. 1 Typical Output Characteristic
T , AMBIENT TEMPERATURE (°C)
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
GS
D
V
A
4
0.5
GS
V
= 2.0V
Fig. 3 Typical On-Resistance
GS
V
V
0
= 2.5V
V
GS
GS
V
GS
= 3.0V
GS
= 3.5V
= 4.0V
= 4.5V
= 10V
25
8
1.0
V
V
V
50
GS
GS
GS
= 1.8V
= 2.5V
= 4.5V
12
75
V
I = 20A
GS
D
V
GS
= 10V
1.5
V
= 1.5V
100
GS
I = 10A
D
16
= 4.5V
125 150
2.0
20
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0.04
0.03
0.02
0.01
0.04
0.03
0.02
0.01
20
16
12
8
4
0
0
0
0
-50 -25
0
Fig. 6 On-Resistance Variation with Temperature
V
V
GS
DS
0.5
V
Fig. 2 Typical Transfer Characteristic
= 4.5V
= 5V
T = 85°C
T , AMBIENT TEMPERATURE (°C)
GS
vs. Drain Current and Temperature
A
A
T = 125°C
A
, GATE-SOURCE VOLTAGE (V)
T = 150°C
Fig. 4 Typical On-Resistance
0
A
5
I , DRAIN CURRENT (A)
V
D
1.0
I = 20A
GS
D
= 10V
V
25
GS
I = 10A
D
= 4.5V
1.5
T = -55°C
50
A
10
T = 25°C
A
75
2.0
DMG5802LFX
T = -55°C
T = 150°C
T = 125°C
T = 85°C
T = 25°C
A
A
A
A
A
100
15
2.5
© Diodes Incorporated
125 150
February 2011
3.0
20