DMG5802LFX-7 Diodes Inc, DMG5802LFX-7 Datasheet - Page 2

• Manufacturer Part Number: DMG5802LFX-7
• Description: MOSFET Power Dual N-Ch 24V Mosfet 0.98W PD
• Manufacturer: Diodes Inc
• Series: -r

Specifications of DMG5802LFX-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 31.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 1066.4pF @ 15V
• Power - Max: 980mW
• Mounting Type: Surface Mount
• Package / Case: 6-VFDFN Exposed Pad
• Lead Free Status / Rohs Status: Details

Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 4) V
Pulsed Drain Current (Note 5)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V
Total Gate Charge V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMG5802LFX
Document number: DS35009 Rev. 2 - 2
4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
GS
GS
Characteristic
= 4.5V
= 10V
@T
A
= 25°C unless otherwise specified
J
= 25°C
GS
GS
Characteristic
Characteristic
= 4.5V
= 2.5V
@ T
A
A
= 25°C unless otherwise stated
= 25°C (Note 4)
Steady
Steady
State
State
Symbol
R
BV
V
DS (ON)
t
t
I
I
|Y
C
V
C
C
Q
D(on)
D(off)
GS(th)
Q
GSS
DSS
R
Q
Q
t
t
SD
oss
DSS
iss
rss
gs
gd
fs
r
f
g
g
g
|
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T
T
T
T
A
A
A
A
2 of 6
Min
0.6
24
= 25°C
= 70°C
= 25°C
= 70°C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1066.4
132.0
127.1
13.43
32.18
22.45
1.47
14.5
31.3
3.69
Typ
0.9
0.6
2.0
3.1
11
12
13
14
17
-
-
-
Max
±10
1.0
1.5
0.9
15
17
18
20
Symbol
T
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Symbol
J
V
R
V
,
P
I
T
DSS
GSS
DM
θJA
I
I
D
D
D
STG
Unit
mΩ
μA
μA
pF
nC
ns
ns
ns
ns
Ω
V
V
S
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
I
V
R
D
GS
DS
GS
DS
GS
GS
GS
GS
DS
GS
DS
DS
GS
GS
GS
L
-55 to +150
= 5.8A
= 2.1Ω, R
= 24V, V
= V
= 5V, I
= 15V, V
= 0V, V
= 0V, I
= ±12V, V
= 4.5V, I
= 4V, I
= 3.1V, I
= 2.5V, I
= 0V, I
= 4.5V, V
= 10V, V
= 10V, V
Value
126.5
Max
0.98
±12
6.5
5.2
5.6
4.5
24
70
GS
Test Condition
DMG5802LFX
, I
D
D
D
S
GS
D
G
= 250μA
= 5.6A
= 6.5A
= 1A
GS
D
D
D
GS
DS
DS
DS
= 250μA
DS
= 3Ω
= 6.5A
= 5.6A
= 5.6A
= 0V, f = 1MHz
= 0V
= 0V,
= 15V,
= 15V,
= 15V, I
= 0V
© Diodes Incorporated
February 2011
°C/W
Unit
Unit
D
°C
W
V
V
A
A
A
= 5.8A