TSM2N60CP Taiwan Semiconductor

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TSM2N60CP

Manufacturer Part Number

TSM2N60CP

Description

MOSFET Power 600V 2.0A 2.5W

Manufacturer

Taiwan Semiconductor

Specifications of TSM2N60CP

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

5 Ohms

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

2 A

Power Dissipation

44 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TO-252

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Other names

RO

Related parts for TSM2N60CP

Related keywords

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