IPG20N06S2L-65 Infineon Technologies
IPG20N06S2L-65
Manufacturer Part Number
IPG20N06S2L-65
Description
MOSFET Power Dual N-Ch 55V MOSFET
Manufacturer
Infineon Technologies
Specifications of IPG20N06S2L-65
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
65 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
20 A
Power Dissipation
43 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TDSON-8
Lead Free Status / Rohs Status
Details
Other names
IPG20N06S2L65XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPG20N06S2L-65A
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000