J308-E3 Vishay, J308-E3 Datasheet - Page 5

• Manufacturer Part Number: J308-E3
• Description: TRANSISTOR,JFET,N-Channel,25V,12mA, TO-92
• Manufacturer: Vishay

Specifications of J308-E3

• Power Dissipation Pd: 350mW
• Transistor Polarity: N Channel
• Current Rating: 10mA
• Continuous Drain Current Id: 60mA
• Gate-source Breakdown Voltage: -25V
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Mounting Type: Through Hole
• Gate-source Cutoff Voltage: -6.5V

TYPICAL CHARACTERISTICS (T
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
20
16
12
30
24
18
12
30
24
18
12
8
4
0
6
0
6
0
0
0
0
Transconductance vs. Gate-Source Voltage
V
GS(off)
125_C
V
125_C
V
GS(off)
GS(off)
T
A
−0.4
−0.4
= −1.5 V
2
= −55_C
T
V
A
V
= −1.5 V
= −1.5 V
Transfer Characteristics
DS
V
Output Characteristics
= −55_C
GS
GS
− Drain-Source Voltage (V)
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
25_C
−0.8
−0.8
4
25_C
−1.2
−1.2
6
V
V
f = 1 kHz
GS
V
DS
DS
= 10 V
= 0 V
−1.6
−1.6
−0.2 V
−0.4 V
−0.8 V
−1.0 V
−0.6 V
= 10 V
8
A
= 25_C UNLESS OTHERWISE NOTED)
−2
10
−2
100
50
40
30
20
10
80
60
40
20
50
40
30
20
10
0
0
0
0
0
0
Transconductance vs. Gate-Source Voltage
25_C
V
125_C
GS(off
V
V
GS(off)
T
T
GS(off)
)
A
A
−0.6
−0.6
125_C
= −3 V
2
= −55_C
= −55_C
V
= −3 V
V
Transfer Characteristics
V
= −3 V
J/SST/U308 Series
DS
Output Characteristics
GS
GS
− Drain-Source Voltage (V)
− Gate-Source Voltage (V)
25_C
− Gate-Source Voltage (V)
−1.2
−1.2
4
Vishay Siliconix
−1.8
−1.8
6
V
f = 1 kHz
V
DS
V
DS
www.vishay.com
GS
−2.4
−2.4
= 10 V
= 10 V
8
= 0 V
−0.4 V
−0.8 V
−1.2 V
−1.6 V
−2.0 V
−2.4 V
10
−3
−3
5