J308-E3 Vishay, J308-E3 Datasheet - Page 2
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J308-E3
Manufacturer Part Number
J308-E3
Description
TRANSISTOR,JFET,N-Channel,25V,12mA, TO-92
Manufacturer
Vishay
Datasheet
1.J308-E3.pdf
(8 pages)
Specifications of J308-E3
Power Dissipation Pd
350mW
Transistor Polarity
N Channel
Current Rating
10mA
Continuous Drain Current Id
60mA
Gate-source Breakdown Voltage
-25V
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Mounting Type
Through Hole
Gate-source Cutoff Voltage
-6.5V
J/SST/U308 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
Gate Current :
Lead Temperature (
Storage Temperature :
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (T
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Common-Source
Input Capacitance
Common-Source
Common Source
Reverse Transfer Capacitance
Equivalent Input
Noise Voltage
High Frequency
Common-Gate
Common-Gate
Forward Transconductance
Common-Gate
Common-Gate
Output Conductance
Common Gate Power Gain
Common-Gate Power Gain
Noise Figure
Noise Figure
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms duty cycle v3%.
Gain (G
Parameter
pg
) measured at optimum input noise match.
C
1
/
16
” from case for 10 sec.)
b
c
c
(J/SST Prefixes)
(U Prefix)
(J/SST Prefixes)
(U Prefix)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
Symbol
V
V
r
V
(BR)GSS
DS(on)
I
I
GS(off)
I
C
C
C
C
G
G
GS(F)
g
g
DSS
GSS
GSS
g
NF
NF
g
g
g
e
I
G
os
rss
rss
og
i
iss
f
fg
pg
fs
n
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
V
V
I
D
DS
DS
= 10 mA
V
V
V
V
= 10 V
= 10 V
I
V
V
V
V
Test Conditions
V
I
V
−55 to 150_C
−65 to 175_C
G
V
DS
DS
DS
GS
G
V
f = 1 MHz
f = 1 MHz
DS
DG
GS
DS
DS
DS
GS
= −1 mA , V
DS
= 10 mA
= 10 V, I
= 10 V, I
= 10 V, I
= −15 V, V
= 10 V, V
= −10 V
= 9 V, I
= 10 V
= 10 V, I
= 0 V, I
= 0 V
f = 100 Hz
f = 1 kHz
10 mA
20 mA
300_C
10 V
−25 V
D
D
D
D
D
D
DS
GS
= 10 mA
= 1 mA
DS
= 10 mA
= 10 mA
= 10 mA
= 1 nA
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
T
A
= 0 V
= 0 V
= 0 V
= 125_C
Operating Junction Temperature
Power Dissipation :
Notes
a.
b.
SST
SST
J
J
J
Derate 2.8 mW/_C above 25_C
Derate 4 mW/_C above 25_C
−0.002
−0.001
Typ
0.16
0.55
11.5
−35
−15
110
0.7
1.9
1.9
1.5
2.7
35
14
14
13
16
4
4
6
a
A
Min Max Min Max Min Max Unit
−25
−1
12
J/SST308
8
= 25_C UNLESS NOTED)
(J/SST Prefixes)
(U Prefix)
−6.5
250
2.5
60
−1
−1
1
5
. . . . . . . . . . . . . . . . . . . . . . . . . .
−25
b
−1
12
10
J/SST309
Limits
. . . . . . . . . . . . . . . . . . . . . . .
a
250
2.5
. . . . . . . . . . . . . . . . .
−4
30
−1
−1
S-50149—Rev. H, 24-Jan-05
1
5
Document Number: 70237
−25
−2
24
J/SST310
8
−55 to 150_C
−6.5
250
2.5
60
−1
−1
1
5
350 mW
500 mW
√Hz
mA
mS
nV⁄
mS
mS
nA
mA
pA
mS
dB
dB
pF
pF
W
V
V
V
NZB