C4D10120E Cree Inc, C4D10120E Datasheet

ZRecTM 2A 1200V SiC Schottky Diode TO-252-2

C4D10120E

Manufacturer Part Number
C4D10120E
Description
ZRecTM 2A 1200V SiC Schottky Diode TO-252-2
Manufacturer
Cree Inc
Series
-r
Datasheet

Specifications of C4D10120E

Diode Type
Schottky
Repetitive Reverse Voltage Vrrm Max
1200V
Forward Current If(av)
18A
Forward Voltage Vf Max
1.8V
Forward Surge Current Ifsm Max
46A
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C4D10120E
Manufacturer:
CREE
Quantity:
1 000
Part Number:
C4D10120E
Manufacturer:
CREE/科锐
Quantity:
20 000
C4D10120E
Z-R
Features
Benefits
Applications
Maximum Ratings
Symbol Parameter
I
V
V
F(AVG)
I
I
1200-Volt Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on V
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Solar Inverters
Power Factor Correction
V
P
T
FRM
FSM
T
T
RRM
RSM
stg
DC
tot
c
J
ec ™
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge
Current
Power Dissipation
Maximum Case Temperature
Operating Junction Range
Storage Temperature Range
R
ectifieR
–Silicon Carbide Schottky Diode
Subject to change without notice.
F
www.cree.com
Value
-55 to
-55 to
170.5
+175
+135
1200
1300
1200
31.5
59.5
16.1
73.9
135
47
71
PIN 1
PIN 2
Package
Part Number
Unit
C4D10120E
TO-252-2
˚C
˚C
˚C
W
V
V
V
A
A
A
T
T
T
T
T
T
T
C
C
C
C
C
C
C
=135˚C; No AC component
=25˚C, t
=110˚C, t
=25˚C, t
=110˚C, t
=25˚C
=110˚C
P
P
Test Conditions
=10 ms, Half Sine pulse
=10 ms, Half Sine pulse
P
P
=10 ms, Half Sine pulse
=10 ms, Half Sine pulse
Package
TO-252-2
CASE
V
I
Q
F(AVG)
RRM
c
C4D10120
Marking
= 10 A
= 1200 V
= 66 nC
Note
1

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C4D10120E Summary of contents

Page 1

... Non-Repetitive Peak Forward Surge I Current FSM P Power Dissipation tot T Maximum Case Temperature c T Operating Junction Range J T Storage Temperature Range stg Package F TO-252-2 PIN 1 PIN 2 Part Number C4D10120E Value Unit 1200 V 1300 V 1200 V 16 =135˚ component =25˚ 31.5 T =110˚C, t ...

Page 2

... TO-252 Package Thermal Resistance from Junction to Case θJC Typical Performance =-55° 25° 75° =125° =175° 0 (V) F Figure 1. Forward Characteristics 2 C4D10120E Rev. - Typ. Max. Unit 1.5 1 250 μA 55 350 66 nC 754 2 Test Conditions =25° =175° ...

Page 3

... T ˚C C Figure 3. Current Derating 200 400 V (V) R Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D10120E Rev. - 180.0 160.0 140.0 20% Duty* 30% Duty* 50% Duty* 120.0 70% Duty* DC 100.0 80.0 60.0 40.0 20.0 0.0 125 150 175 800 700 600 500 400 300 200 100 0 600 ...

Page 4

... Typical Performance 1 0.1 0.01 0.001 0.0001 1E-6 10E-6 Diode Model Diode Model CSD04060 C4D10120E Rev. - 100E-6 1E-3 10E-3 T (sec) Figure 7. Transient Thermal Impedance If*R +If 0.965 + (T * -1.3*10 = 0.98+(T * -1.71* 0.096 + (T * 1.06*10 = 0.040+( Note Diode Junction Temperature In Degrees Celcius 100E 5.32* ...

Page 5

... Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc C4D10120E Rev. - Part Number Package C4D10120E TO-252-2 ...

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