C4D10120E Cree Inc, C4D10120E Datasheet - Page 2

• Manufacturer Part Number: C4D10120E
• Description: ZRecTM 2A 1200V SiC Schottky Diode TO-252-2
• Manufacturer: Cree Inc
• Series: -r

Specifications of C4D10120E

• Diode Type: Schottky
• Repetitive Reverse Voltage Vrrm Max: 1200V
• Forward Current If(av): 18A
• Forward Voltage Vf Max: 1.8V
• Forward Surge Current Ifsm Max: 46A
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Note:
1.
Typical Performance
Electrical Characteristics
Thermal Characteristics
2
Symbol
Symbol
This is a majority carrier diode, so there is no reverse recovery charge.
R
Q
20
18
16
14
12
10
V
I
C
8
6
4
2
0
θJC
R
F
C
0
C4D10120E Rev. -
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Parameter
TO-252 Package Thermal Resistance from Junction to Case
0.5
Figure 1. Forward Characteristics
T
T
T
T
T
J
J
J
J
J
= 25°C
= 75°C
=-55°C
=125°C
=175°C
1
1.5
V
F
2
(V)
2.5
3
Typ.
754
1.5
2.2
30
55
66
45
38
3.5
4
Max.
250
350
1.8
3
Unit
5
4
3
2
1
0
nC
μA
pF
V
0
Typ.
0.88
Figure 2. Reverse Characteristics
I
I
V
V
V
di/dt = 200 A/μs
T
V
V
V
F
F
J
R
R
R
R
R
R
= 10 A T
= 10 A T
= 25°C
= 1200 V T
= 1200 V T
= 1200 V, I
= 0 V, T
= 400 V, T
= 800 V, T
T
T
T
T
T
J
J
J
J
J
=-55°C
= 25°C
= 75°C
=125°C
=175°C
500
°C/W
Unit
Test Conditions
J
J
J
V
= 25°C, f = 1 MHz
=25°C
=175°C
J
J
R
F
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
J
J
=25°C
=175°C
(V)
= 10A
1000
1500
Note
2000