C4D10120A Cree Inc, C4D10120A Datasheet - Page 2

• Manufacturer Part Number: C4D10120A
• Description: ZRecTM 2x5A 1200V SiC Schottky Diode TO-247-3
• Manufacturer: Cree Inc
• Series: Z-Rec™r

Specifications of C4D10120A

• Voltage - Forward (vf) (max) @ If: 1.8V @ 10A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 14A
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 754pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 1.2kV
• Forward Current If(av): 14A
• Forward Voltage Vf Max: 1.8V
• Forward Surge Current Ifsm Max: 71A
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics
1. Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Typical Performance
2
Symbol
Symbol
R
Q
20
18
16
14
12
10
V
I
C
θJC
8
6
4
2
0
R
F
C
0
C4D10120A Rev. -
Figure 1. Forward Characteristics
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Thermal Resistance from Junction
to Case
0.5
T
T
T
T
T
J
J
J
J
J
=-55°C
= 25°C
= 75°C
=125°C
=175°C
1
V
Parameter
F
Forward Voltage
V
1.5
F
(V)
2
2.5
3
Typ.
Typ.
754
1.5
2.2
1.1
30
55
66
45
38
3.5
Max.
Max.
250
350
1.8
3
600.00
500.00
400.00
300.00
200.00
100.00
0.00
Unit
°C/W
Unit
nC
μA
pF
V
0
Figure 2. Reverse Characteristics
I
I
V
V
V
di/dt = 200 A/μs
T
V
V
V
T
T
T
T
T
F
F
J
R
R
R
R
R
R
J
J
J
J
J
=-55°C
= 25°C
= 75°C
= 10 A T
= 10 A T
= 25°C
=125°C
=175°C
= 1200 V T
= 1200 V T
= 1200 V, I
= 0 V, T
= 400 V, T
= 800 V, T
500
Test Conditions
Test Conditions
V
R
J
J
J
= 25°C, f = 1 MHz
Reverse Voltage
=25°C
=175°C
V
J
J
F
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
J
J
R
=25°C
=175°C
= 10A
1000
(V)
1500
Note
Note
2000