C4D10120A Cree Inc, C4D10120A Datasheet - Page 2

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C4D10120A

Manufacturer Part Number
C4D10120A
Description
ZRecTM 2x5A 1200V SiC Schottky Diode TO-247-3
Manufacturer
Cree Inc
Series
Z-Rec™r
Datasheet

Specifications of C4D10120A

Voltage - Forward (vf) (max) @ If
1.8V @ 10A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
14A
Current - Reverse Leakage @ Vr
250µA @ 1200V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
754pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Repetitive Reverse Voltage Vrrm Max
1.2kV
Forward Current If(av)
14A
Forward Voltage Vf Max
1.8V
Forward Surge Current Ifsm Max
71A
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C4D10120A
Manufacturer:
CREE/科锐
Quantity:
20 000
Electrical Characteristics
1. Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Typical Performance
2
Symbol
Symbol
R
Q
20
18
16
14
12
10
V
I
C
θJC
8
6
4
2
0
R
F
C
0
C4D10120A Rev. -
Figure 1. Forward Characteristics
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Thermal Resistance from Junction
to Case
0.5
T
T
T
T
T
J
J
J
J
J
=-55°C
= 25°C
= 75°C
=125°C
=175°C
1
V
Parameter
F
Forward Voltage
V
1.5
F
(V)
2
2.5
3
Typ.
Typ.
754
1.5
2.2
1.1
30
55
66
45
38
3.5
Max.
Max.
250
350
1.8
3
600.00
500.00
400.00
300.00
200.00
100.00
0.00
Unit
°C/W
Unit
nC
μA
pF
V
0
Figure 2. Reverse Characteristics
I
I
V
V
V
di/dt = 200 A/μs
T
V
V
V
T
T
T
T
T
F
F
J
R
R
R
R
R
R
J
J
J
J
J
=-55°C
= 25°C
= 75°C
= 10 A T
= 10 A T
= 25°C
=125°C
=175°C
= 1200 V T
= 1200 V T
= 1200 V, I
= 0 V, T
= 400 V, T
= 800 V, T
500
Test Conditions
Test Conditions
V
R
J
J
J
= 25°C, f = 1 MHz
Reverse Voltage
=25°C
=175°C
V
J
J
F
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
J
J
R
=25°C
=175°C
= 10A
1000
(V)
1500
Note
Note
2000

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