C4D10120A Cree Inc, C4D10120A Datasheet

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C4D10120A

Manufacturer Part Number
C4D10120A
Description
ZRecTM 2x5A 1200V SiC Schottky Diode TO-247-3
Manufacturer
Cree Inc
Series
Z-Rec™r
Datasheet

Specifications of C4D10120A

Voltage - Forward (vf) (max) @ If
1.8V @ 10A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
14A
Current - Reverse Leakage @ Vr
250µA @ 1200V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
754pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Repetitive Reverse Voltage Vrrm Max
1.2kV
Forward Current If(av)
14A
Forward Voltage Vf Max
1.8V
Forward Surge Current Ifsm Max
71A
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C4D10120A
Manufacturer:
CREE/科锐
Quantity:
20 000
C4D10120A
Z-R
Features
Benefits
Applications
Maximum Ratings
Symbol
I
V
V
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Swtitching
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
F(AVG)
I
I
P
T
V
T
FRM
FSM
T
RRM
RSM
stg
tot
R
c
J
ec ™
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Peak Reverse Voltage
Maximum DC Current
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Power Dissipation
Maximum Case Temperature
Operating Junction Range
Storage Temperature Range
TO-220 Mounting Torque
R
ectifieR
(T
Parameter
C
–Silicon Carbide Schottky Diode
=25°C unless otherwise specified)
Subject to change without notice.
www.cree.com/power
Value
-55 to
-55 to
+175
+135
1200
1300
1200
31.5
59.5
136
135
8.8
14
47
71
59
1
Package
PIN 1
PIN 2
Part Number
lbf-in
Unit
C4D10120A
Nm
˚C
˚C
˚C
TO-220-2
W
V
V
V
A
A
A
T
T
T
T
T
T
T
M3 Screw
6-32 Screw
C
C
C
C
C
C
C
=135˚C, no AC component
=25˚C, t
=110˚C, t
=25˚C, t
=110˚C, t
=25˚C
=110˚C
Test Conditions
P
P
=10 ms, Half Sine Pulse
=10 ms, Half Sine Pulse
P
P
=10 ms, Half Sine Pulse
=10 ms, Half Sine Pulse
Package
TO-220-2
CASE
V
I
Q
F
RRM
c
= 1200 V
= 10 A
= 66 nC
C4D10120
Marking
Note
1

Related parts for C4D10120A

C4D10120A Summary of contents

Page 1

... I Non-Repetitive Forward Surge Current FSM P Power Dissipation tot T Maximum Case Temperature c T Operating Junction Range J T Storage Temperature Range stg TO-220 Mounting Torque Package TO-220-2 PIN 1 PIN 2 Part Number C4D10120A Value Unit 1200 V 1300 V 1200 =135˚ component =25˚ 31.5 T =110˚C, t ...

Page 2

... 25° 75° =125° =175° 0 Forward Voltage V ( Figure 1. Forward Characteristics 2 C4D10120A Rev. - Typ. Max. Unit 1.5 1 250 μA 55 350 66 nC 754 Typ. Max. Unit 1.1 °C/W 600.00 500.00 400.00 300.00 200.00 100.00 0.00 0 2.5 3 3.5 Figure 2 ...

Page 3

... T ˚C C Figure 3. Current Derating 200 400 V (V) R Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D10120A Rev. - 160.0 140.0 10% Duty 30% Duty 120.0 50% Duty 70% Duty DC 100.0 80.0 60.0 40.0 20.0 0.0 25 125 150 175 800 700 600 500 400 300 200 100 0 600 800 1000 0 ...

Page 4

... Diode Model Diode Model CSD04060 C4D10120A Rev. - 100E-6 1E-3 10E-3 T (Sec) Figure 7. Transient Thermal Impedance If*R +If 0.965 + (T * -1.3*10 = 0.98+(T * -1.71* 0.096 + (T * 1.06*10 = 0.040+( Note Diode Junction Temperature In Degrees Celcius 100E 5.32* ...

Page 5

... Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc C4D10120A Rev ...

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