MT18HTF25672AZ-667H1 Micron Technology Inc, MT18HTF25672AZ-667H1 Datasheet - Page 16

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MT18HTF25672AZ-667H1

Manufacturer Part Number
MT18HTF25672AZ-667H1
Description
MODULE DDR2 SDRAM 2GB 240UDIMM
Manufacturer
Micron Technology Inc
Series
-r

Specifications of MT18HTF25672AZ-667H1

Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240UDIMM
Device Core Size
72b
Organization
256Mx72
Total Density
2GByte
Chip Density
1Gb
Access Time (max)
900ns
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.136A
Number Of Elements
18
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
667MT/s
Features
-
Package / Case
240-UDIMM
Lead Free Status / Rohs Status
Compliant
Table 12: DDR2 I
Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
PDF: 09005aef83c6d17f
htf18c256_512x72az.fm - Rev. B 2/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving reads; I
= 0mA; BL = 4, CL = CL (I
(I
commands; Address bus inputs are stable during deselects; Data bus inputs are switch-
ing
DD
),
t
RRD =
t
RRD (I
DD
DD
Notes:
),
Specifications and Conditions – 4GB (Continued)
t
DD
RCD =
), AL =
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
t
RCD (I
t
in I
RCD (I
DD2P
DD
DD
); CKE is HIGH, S# is HIGH between valid
(CKE LOW) mode.
) - 1 ×
2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM UDIMM
t
CK (I
DD
);
t
CK =
16
t
CK (I
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
),
t
RC =
t
RC
OUT
Symbol
I
DD7
1
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
-80E/
-800
3200
Specifications
2800
-667
Units
mA

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