MT18HTF25672AZ-667H1 Micron Technology Inc, MT18HTF25672AZ-667H1 Datasheet - Page 15

• Manufacturer Part Number: MT18HTF25672AZ-667H1
• Description: MODULE DDR2 SDRAM 2GB 240UDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT18HTF25672AZ-667H1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 1Gb
• Access Time (max): 900ns
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.136A
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 667MT/s
• Features: -
• Package / Case: 240-UDIMM
• Lead Free Status / Rohs Status: Compliant

Table 12: DDR2 I
Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
PDF: 09005aef83c6d17f
htf18c256_512x72az.fm - Rev. B 2/10 EN
Parameter
Operating one bank active-precharge current:
t
inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
(I
CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching;
Data pattern is same as I
Precharge power-down current: All device banks idle;
Other control and address bus inputs are stable; Data bus inputs are floating
Precharge quiet standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs
are floating
Precharge standby current: All device banks idle;
HIGH; Other control and address bus inputs are switching; Data bus inputs are switch-
ing
Active power-down current: All device banks open;
(I
Data bus inputs are floating
Active standby current: All device banks open;
(I
and address bus inputs are switching; Data bus inputs are switching
Operating burst write current: All device banks open; Continuous burst writes; BL
= 4, CL = CL (I
HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data
bus inputs are switching
Operating burst read current: All device banks open; Continuous burst read, I
= 0mA; BL = 4, CL = CL (I
(I
ing; Data bus inputs are switching
Burst refresh current:
val; CKE is HIGH, S# is HIGH between valid commands; Other control and address bus
inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus
inputs are floating; Data bus inputs are floating
RAS =
DD
DD
DD
DD
), AL = 0;
); CKE is LOW; Other control and address bus inputs are stable;
),
); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switch-
t
RP =
t
RAS MIN (I
t
RP (I
t
DD
CK =
), AL = 0;
DD
DD
); CKE is HIGH, S# is HIGH between valid commands; Other control
t
DD
CK (I
); CKE is HIGH, S# is HIGH between valid commands; Address bus
Specifications and Conditions – 4GB
t
DD
DD
DD4W
CK =
t
CK =
),
), AL = 0;
t
RC =
t
CK (I
t
CK (I
t
RC (I
DD
t
DD
CK =
); REFRESH command at every
),
DD
t
RAS =
),
t
CK (I
2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM UDIMM
t
RAS =
DD
t
RAS MAX (I
),
t
CK =
t
t
RAS MIN (I
t
CK =
RAS =
t
CK =
t
CK =
t
CK (I
t
CK (I
t
OUT
CK =
t
t
t
CK (I
RAS MAX (I
CK =
DD
15
t
DD
CK
= 0mA; BL = 4, CL = CL
DD
),
DD
),
t
DD
t
),
CK (I
),
RP =
t
t
CK (I
); CKE is HIGH, S# is
RAS =
t
t
RCD =
RC =
t
RFC (I
DD
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
RP (I
DD
); CKE is LOW;
t
t
); CKE is
RC (I
RAS MAX
),
t
RCD (I
DD
DD
t
RP =
) inter-
); CKE is
DD
),
DD
t
OUT
RP
);
Symbol
I
I
I
I
I
I
I
DD4W
DD2Q
I
I
DD2N
DD3N
DD4R
I
I
DD2P
DD3P
DD0
DD1
DD5
DD6
1
1
2
2
2
2
1
2
2
2
1
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
-80E/
-800
1000
1400
1040
1120
1040
1520
1600
4800
160
720
224
160
Specifications
1240
1280
1440
4480
-667
880
160
880
960
640
224
880
160
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA