2SD1047 STMicroelectronics, 2SD1047 Datasheet - Page 2

• Manufacturer Part Number: 2SD1047
• Description: IGBT & Power Bipolar
• Manufacturer: STMicroelectronics
• Series: -r

Specifications of 2SD1047

• Transistor Type: NPN
• Current - Collector (ic) (max): 12A
• Voltage - Collector Emitter Breakdown (max): 140V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 700mA, 7A
• Current - Collector Cutoff (max): -
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 1A, 5V
• Power - Max: 100W
• Frequency - Transition: 20MHz
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical ratings
1
2/10
Electrical ratings
Table 2.
Table 3.
Symbol
Symbol
R
V
V
V
thj-case
T
I
P
CBO
CEO
EBO
T
CM
I
stg
C
tot
J
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage (I
Collector current
Collector peak current (t
Total dissipation at T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case ____max
Absolute maximum ratings
Thermal data
Doc ID 018729 Rev 1
c
= 25 °C
C
Parameter
Parameter
P
E
= 0)
< 5 ms)
= 0)
B
= 0)
-65 to 150
Value
Value
1.25
200
140
100
150
12
20
6
2SD1047
°C/W
Unit
Unit
°C
°C
W
V
V
V
A
A