PTFB211503FL V2 R250 Infineon Technologies, PTFB211503FL V2 R250 Datasheet - Page 2

• Manufacturer Part Number: PTFB211503FL V2 R250
• Description: RF MOSFET Power RF LDMOS FETs 150W 2110-2170 MHz
• Manufacturer: Infineon Technologies

Specifications of PTFB211503FL V2 R250

• Lead Free Status / Rohs Status: No
• Other names: FB211503FLV2R25NT

Confidential, Limited Internal Distribution
RF Characteristics
Two-tone Measurement
V
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
Ordering Information
Type and Version
PTFB211503EL V1
PTFB211503EL V1 R250
PTFB211503FL V2
PTFB211503FL V2 R250
Data Sheet
DD
= 30 V, I
DQ
= 1.2 A, P
CASE
OUT
(cont.)
= 70°C, 150 W CW)
(tested in Infineon test fixture)
Package Outline
H-33288-6
H-33288-6
H-34288-4/2
H-34288-4/2
= 150 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Conditions
V
V
V
V
V
V
GS
DS
DS
GS
DS
GS
= 0 V, I
= 28 V, V
= 63 V, V
= 10 V, V
= 30 V, I
= 10 V, V
DS
DQ
GS
GS
DS
DS
= 10 µA
Package Description
Slotted flange, single-ended
Slotted flange, single-ended
Earless flange, single-ended
Earless flange, single-ended
= 1.2 A
= 0 V
= 0 V
= 0.1 V
= 0 V
2 of 14
V
Symbol
Symbol
Symbol
R
(BR)DSS
V
T
R
I
I
I
DS(on)
Gps
IMD
V
V
DSS
DSS
GSS
h
DSS
STG
T
qJC
GS
GS
D
J
Min
16.5
Min
1.6
39
65
—
—
—
—
—
–40 to +150
–6 to +10
Value
Shipping
Tray
Tape & Reel 250 pcs
Tray
Tape & Reel 250 pcs
Typ
Typ
0.08
0.27
–30
200
2.1
18
40
65
—
—
—
—
PTFB211503EL
PTFB211503FL
Rev. 04, 2011-03-07
Max
Max
10.0
–28
1.0
3.0
1.0
—
—
—
—
°C/W
Unit
Unit
Unit
dBc
dB
µA
µA
µA
°C
°C
%
W
V
V
V
V