BFY181 (S) Infineon Technologies, BFY181 (S) Datasheet - Page 3

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BFY181 (S)

Manufacturer Part Number
BFY181 (S)
Description
RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFY181 (S)

Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
20 mA
Power Dissipation
175 mW
Maximum Operating Temperature
+ 200 C
Package / Case
Micro-X
Dc Collector/base Gain Hfe Min
55 at 5 mA at 6 V
Gain Bandwidth Product Ft
8 GHz
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / Rohs Status
No
Other names
BFY181SNZ
Electrical Characteristics (continued)
Notes.:
1)
IFAG IMM RPD D HIR
Parameter
DC Characteristics
Base-Emitter forward voltage
I
DC current gain
I
AC Characteristics
Transition frequency
I
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise Figure
I
Z
Power gain
I
Z
Transducer gain
I
Z
E
C
C
C
C
C
C
S
S
S
CB
CE
EB
= 10 mA, V
= 15 mA, I
= 5 mA, V
= 10 mA, V
= 10 mA, V
= 4 mA, V
= 10 mA, V
= Z
= Z
= Z
G
= 10 V, V
= 10 V, V
= 0.5V, V
ma
L
Sopt
Sopt
= 50 
, Z
S
S
12
21
CE
CE
L
C
= Z
CE
BE
BE
CB
CE
CE
CE
= 0
(
= 6 V
= 5 V, f = 2 GHz,
k
= 5 V, f = 2 GHz
= vbe = 0, f = 1 MHz
= vbe = 0, f = 1 MHz
= vcb = 0, f = 1 MHz
= 5 V, f = 500 MHz
= 8 V, f = 500 MHz
= 5V, f = 2 GHz
Lopt
k
2
1
)
,
G
ms
S
S
12
21
Symbol
V
h
f
C
C
C
F
Gma
|S
T
FE
FBE
CB
CE
EB
21e
3 of 4
|
2
1.)
min.
-
55
6.5
-
-
-
-
-
13.5
10
Values
typ.
-
100
7.5
8
0.21
0.34
0.45
2.2
14.5
11
max.
1
175
-
-
0.29
-
0.6
2.9
-
-
V 2, February 2011
Unit
V
-
GHz
pF
pF
pF
dB
dB
dB
BFY181

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