BFY181 (S) Infineon Technologies, BFY181 (S) Datasheet - Page 3

• Manufacturer Part Number: BFY181 (S)
• Description: RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies

Specifications of BFY181 (S)

• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 20 mA
• Power Dissipation: 175 mW
• Maximum Operating Temperature: + 200 C
• Package / Case: Micro-X
• Dc Collector/base Gain Hfe Min: 55 at 5 mA at 6 V
• Gain Bandwidth Product Ft: 8 GHz
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / Rohs Status: No
• Other names: BFY181SNZ

Electrical Characteristics (continued)
Notes.:
1)
IFAG IMM RPD D HIR
Parameter
DC Characteristics
Base-Emitter forward voltage
I
DC current gain
I
AC Characteristics
Transition frequency
I
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise Figure
I
Z
Power gain
I
Z
Transducer gain
I
Z
E
C
C
C
C
C
C
S
S
S
CB
CE
EB
= 10 mA, V
= 15 mA, I
= 5 mA, V
= 10 mA, V
= 10 mA, V
= 4 mA, V
= 10 mA, V
= Z
= Z
= Z
G
= 10 V, V
= 10 V, V
= 0.5V, V
ma
L
Sopt
Sopt
= 50 

, Z
S
S
12
21
CE
CE
L
C
= Z
CE
BE
BE
CB
CE
CE
CE
= 0
(
= 6 V
= 5 V, f = 2 GHz,
k
= 5 V, f = 2 GHz
= vbe = 0, f = 1 MHz
= vbe = 0, f = 1 MHz
= vcb = 0, f = 1 MHz
= 5 V, f = 500 MHz
= 8 V, f = 500 MHz
= 5V, f = 2 GHz
Lopt

k
2

1
)
,
G
ms

S
S
12
21
Symbol
V
h
f
C
C
C
F
Gma
|S
T
FE
FBE
CB
CE
EB
21e
3 of 4
|
2
1.)
min.
-
55
6.5
-
-
-
-
-
13.5
10
Values
typ.
-
100
7.5
8
0.21
0.34
0.45
2.2
14.5
11
max.
1
175
-
-
0.29
-
0.6
2.9
-
-
V 2, February 2011
Unit
V
-
GHz
pF
pF
pF
dB
dB
dB
BFY181