UF28100V M/A-COM Technology, UF28100V Datasheet - Page 3

• Manufacturer Part Number: UF28100V
• Description: RF MOSFET Power 100-500MHz 100Watts 28Volt 10dB
• Manufacturer: M/A-COM Technology

Specifications of UF28100V

• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Forward Transconductance Gfs (max / Min): 1.5 S
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Lead Free Status / Rohs Status: Details

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prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
RELEASED: In full production, samples readily available, standard lead times apply.
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
UF28100V
TEST FIXTURE SCHEMATIC
TEST FIXTURE ASSEMBLY
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