UF28100V M/A-COM Technology, UF28100V Datasheet

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UF28100V

Manufacturer Part Number
UF28100V
Description
RF MOSFET Power 100-500MHz 100Watts 28Volt 10dB
Manufacturer
M/A-COM Technology
Datasheet
1.UF28100V.pdf (3 pages)

Specifications of UF28100V

Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
12 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Forward Transconductance Gfs (max / Min)
1.5 S
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
UF28100V
Manufacturer:
OMRON
Quantity:
2 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
UF28100V
Manufacturer:
M/A-COM
Quantity:
5 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
UF28100V
Manufacturer:
ST
0
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
UF28100V
Manufacturer:
MA/COM
Quantity:
20 000
1
M/A-COM Technology Solutions reserves the right to make changes to the product(s) or informa-
tion contained herein without notice. M/A-COM makes no warranty, representation or guarantee
regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any
liability whatsoever arising out of the use or application of any product(s) or information.
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or
prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
RELEASED: In full production, samples readily available, standard lead times apply.
RF Power MOSFET Transistor
100W, 100-500 MHz, 28V
Features
•
•
•
•
•
UF28100V
ABSOLUTE MAXIMUM RATINGS AT 25° C
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
TYPICAL DEVICE IMPEDANCES
Z
from gate to gate.
Z
measured from drain to drain.
ELECTRICAL CHARACTERISTICS AT 25°C
*Per side
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Return Loss
Load Mismatch Tolerance
IN
LOAD
N-channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than competitive devices
is the series equivalent input impedance of the device
F (MHz)
Parameter
is the optimum series equivalent load impedance as
100
300
500
V
DD
Parameter
=28V, I
DQ
=600 Ma, P
2.25-j1.75
1.5+j5.5
4.5-j6.0
Z
Symbol
IN
T
V
V
θ
I
P
(Ω)
T
STG
DS
DS
GS
JC
D
J
OUT
=100.0 W
-55 to +150
VSWR-T
Symbol
V
BV
Rating
C
C
C
I
I
GS(TH)
G
G
DSS
GSS
ŋ
R
250
200
12*
0.7
OSS
RSS
65
20
ISS
DSS
D
M
Z
14.5+j0.5
P
L
3.5+j3.5
LOAD
7.5j1.0
(Ω)
Min
2.0
1.5
65
10
50
10
-
-
-
-
-
-
Units
°C/W
°C
°C
W
V
V
A
Max
30:1
135
3.0
3.0
6.0
90
24
-
-
-
-
-
Units
mA
µA
pF
pF
pF
dB
dB
%
V
V
S
-
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V
V
V
V
V
V
V
V
V
V
V
V
GS
GS
GS
DS
DS
DS
DS
DS
DD
DD
DD
DD
= 0.0 V , I
= 28.0 V , V
= 20.0 V , V
= 10.0 V , I
= 10.0 V , I
= 28.0 V , F = 1.0 MHz
= 28.0 V , F = 1.0 MHz
= 28.0 V , F = 1.0 MHz
= 28.0 V, I
= 28.0 V, I
= 28.0 V, I
= 28.0 V, I
DS
DS
DS
DQ
DQ
DQ
DQ
GS
DS
= 15.0 mA
= 300.0 mA
3000.0 mA , Δ V
= 600.0 mA, P
= 600.0 mA, P
= 600.0 mA, P
= 600.0 mA, P
= 0.0 V
= 0.0 V
Test Conditions
Released;
OUT
OUT
OUT
OUT
M/A-COM Products
GS
= 100.0 W F =500 MHz
= 100.0 W F =500 MHz
= 100.0 W F =500 MHz
= 100.0 W F =500 MHz
= 1.0V, 80 μs Pulse
RoHS Compliant

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UF28100V Summary of contents

Page 1

... UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Features • N-channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than competitive devices ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter ...

Page 2

... UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V EFFICIENCY FREQUENCY VS P =10W I =600 mA (Push pull device 100 200 300 FREQUENCY (MHz) 2 M/A-COM Technology Solutions reserves the right to make changes to the product(s) or informa- tion contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information ...

Page 3

... UF28100V RF Power MOSFET Transistor 100W, 100-500 MHz, 28V TEST FIXTURE SCHEMATIC TEST FIXTURE ASSEMBLY 3 M/A-COM Technology Solutions reserves the right to make changes to the product(s) or informa- tion contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information ...

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