2N6045 LEADFREE Central Semiconductor, 2N6045 LEADFREE Datasheet

2N6045 LEADFREE

Manufacturer Part Number

2N6045 LEADFREE

Description

Darlington Transistors NPN Darl SW

Manufacturer

Central Semiconductor

Datasheet

1.2N6045.pdf (2 pages)

Specifications of 2N6045 LEADFREE

Configuration

Single

Transistor Polarity

NPN

Mounting Style

Through Hole

Package / Case

TO-220

Collector- Emitter Voltage Vceo Max

100 V

Emitter- Base Voltage Vebo

5 V

Collector- Base Voltage Vcbo

100 V

Maximum Dc Collector Current

10 A

Maximum Collector Cut-off Current

20 uA

Power Dissipation

75 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

8 A

Dc Collector/base Gain Hfe Min

1000

Minimum Operating Temperature

- 65 C

Lead Free Status / Rohs Status

Details

Current page: 1 of 2
Download datasheet (261Kb)

MAXIMUM RATINGS: (T C =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T C =25°C unless otherwise noted)

SYMBOL

I CBO

I CEV

I CEO

I EBO

BV CEO

V CE(SAT)

V BE(SAT)

V BE(ON)

h FE

COMPLEMENTARY SILICON POWER

2N6040 2N6041 2N6042 PNP

2N6043 2N6044 2N6045 NPN

DARLINGTON TRANSISTORS

TO-220 CASE

TEST CONDITIONS

V CB =Rated V CBO

V CE =Rated V CEO , V BE(OFF) =1.5V

V CE =Rated V CEO , V BE(OFF) =1.5V, T C =150°C

V CE =Rated V CEO

V EB =5.0V

I C =100mA (2N6040, 2N6043)

I C =100mA (2N6041, 2N6044)

I C =100mA (2N6042, 2N6045)

I C =4.0A, I B =16mA (2N6040, 2N6041, 2N6043, 2N6044)

I C =3.0A, I B =12mA (2N6042, 2N6045)

I C =8.0A, I B =80mA

V CE =4.0V, I C =4.0A

V CE =4.0V, I C =4.0A (2N6040, 2N6041, 2N6043, 2N6044)

V CE =4.0V, I C =3.0A (2N6042, 2N6045)

V CE =4.0V, I C =8.0A

SYMBOL

T J , T stg

V CBO

V CEO

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6040 and

2N6043 Series types are Complementary Silicon

Power Transistors, manufactured by the epitaxial

base process, designed for general purpose amplifier

applications.

MARKING: FULL PART NUMBER

V EBO

Θ JC

I CM

P D

I C

I B

2N6040

2N6043

-65 to +150

2N6041

2N6044

1,000

1.67

MIN

120

100

5.0

8.0

w w w. c e n t r a l s e m i . c o m

R1 (16-November 2009)

2N6042

2N6045

20,000

MAX

100

200

2.0

4.0

4.5

2.8

UNITS

°C/W

µA

°C

Related parts for 2N6045 LEADFREE

2N6045 LEADFREE Summary of contents

Page 1

... V CE =4.0V =4.0A (2N6040, 2N6041, 2N6043, 2N6044 =4.0V =3.0A (2N6042, 2N6045 =4.0V =8. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER 2N6040 ...

Page 2

... PNP 2N6043 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =4.0V =3.0A, f=1.0kHz =4.0V =3.0A, f=1.0MHz =10V =0, f=100kHz (NPN Types =10V =0, f=100kHz (PNP Types) TO-220 CASE - MECHANICAL OUTLINE ...

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