BUK9Y27-40B NXP Semiconductors, BUK9Y27-40B Datasheet - Page 8

MOSFET, N CH, 40V, 34A, LFPAK

BUK9Y27-40B

Manufacturer Part Number
BUK9Y27-40B
Description
MOSFET, N CH, 40V, 34A, LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9Y27-40B

Transistor Polarity
N Channel
Continuous Drain Current Id
34A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.018ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
NXP Semiconductors
BUK9Y27-40B
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
R
(mΩ)
GS(th)
DSon
(V)
2.5
2.0
1.5
1.0
0.5
0.0
40
30
20
10
−60
junction temperature
of gate-source voltage; typical values.
0
0
4
60
8
max
min
typ
120
12
All information provided in this document is subject to legal disclaimers.
003aac877
V
003aab986
T
j
GS
(°C)
(V)
180
16
Rev. 04 — 7 April 2010
Fig 11. Sub-threshold drain current as a function of
Fig 13. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
a
D
2.4
1.6
0.8
−1
−2
−3
−4
−5
−6
0
−60
gate-source voltage
factor as a function of junction temperature
0
N-channel TrenchMOS logic level FET
0
min
1
BUK9Y27-40B
60
typ
2
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aab987
T
j
(V)
(°C)
03nb25
180
3
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