BUK9Y104-100B NXP Semiconductors, BUK9Y104-100B Datasheet - Page 9

• Manufacturer Part Number: BUK9Y104-100B
• Description: MOSFET, N CH, 100V, 14.8A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y104-100B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14.8A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.086ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.65V
• Rohs Compliant: Yes

NXP Semiconductors
BUK9Y104-100B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
5
4
3
2
1
0
charge; typical values.
0
V
DS
= 14 V
4
(A)
8
I
S
100
80
60
40
20
V
0
DS
0.2
Q
All information provided in this document is subject to legal disclaimers.
G
= 80 V
003aac959
(nC)
12
Rev. 04 — 7 April 2010
T
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
1
C
10
10
10
10
T
4
3
2
10
j
as a function of drain-source voltage; typical
values.
= 25 °C
V
-1
SD
003aac955
(V)
N-channel TrenchMOS logic level FET
1.4
BUK9Y104-100B
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aac952
C
C
C
(V)
oss
rss
iss
10
2
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