BUK9Y104-100B NXP Semiconductors, BUK9Y104-100B Datasheet - Page 9
![MOSFET, N CH, 100V, 14.8A, LFPAK](/photos/22/17/221780/756424404-40_sml.jpg)
BUK9Y104-100B
Manufacturer Part Number
BUK9Y104-100B
Description
MOSFET, N CH, 100V, 14.8A, LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9Y104-100B115.pdf
(14 pages)
Specifications of BUK9Y104-100B
Transistor Polarity
N Channel
Continuous Drain Current Id
14.8A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.086ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.65V
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUK9Y104-100B
Manufacturer:
HARMONIC
Quantity:
10
NXP Semiconductors
BUK9Y104-100B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
5
4
3
2
1
0
charge; typical values.
0
V
DS
= 14 V
4
(A)
8
I
S
100
80
60
40
20
V
0
DS
0.2
Q
All information provided in this document is subject to legal disclaimers.
G
= 80 V
003aac959
(nC)
12
Rev. 04 — 7 April 2010
T
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
1
C
10
10
10
10
T
4
3
2
10
j
as a function of drain-source voltage; typical
values.
= 25 °C
V
-1
SD
003aac955
(V)
N-channel TrenchMOS logic level FET
1.4
BUK9Y104-100B
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aac952
C
C
C
(V)
oss
rss
iss
10
2
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