MT46H8M32LFB5-75 IT:A Micron Technology Inc, MT46H8M32LFB5-75 IT:A Datasheet - Page 83
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT46H8M32LFB5-75 IT:A
Manufacturer Part Number
MT46H8M32LFB5-75 IT:A
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H8M32LFB5-75_ITA.pdf
(96 pages)
Specifications of MT46H8M32LFB5-75 IT:A
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
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Figure 44: Bank Read – With Auto Precharge
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Case 1:
Case 2:
Command
BA0, BA1
Address
DQ
DQ
DQS
DQS
t
t
CK#
CKE
A10
DM
AC (MIN) and
AC (MAX) and
CK
4,5
4,5
4
4
t
t
IS
IS
NOP
T0
t
DQSCK (MIN)
t
t
DQSCK (MAX)
1
t
IH
IH
Notes:
Bank x
ACTIVE
t
t
IS
IS
Row
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. Refer to Figure 29 (page 66) and Figure 30 (page 67) for detailed DQS and DQ timing.
5. D
t
t
IH
IH
t
CK
these times.
OUT
t
t
RAS
RCD
t
RC
n = data-out from column n.
NOP
T2
1
t
CH
t
CL
t
t
Note 3
Bank x
READ
IS
LZ (MIN)
Col n
T3
t
2
IH
83
t
CL = 2
RPRE
t
t
LZ (MIN)
AC (MIN)
256Mb: x16, x32 Mobile LPDDR SDRAM
NOP
T4
1
t
AC (MAX)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
D
RPRE
OUT
t
DQSCK (MIN)
NOP
D
T5
D
OUT
OUT
t
DQSCK (MAX)
1
T5n
D
D
OUT
OUT
t
RP
NOP
D
T6
t
OUT
D
RPST
OUT
1
Don’t Care
©2008 Micron Technology, Inc. All rights reserved.
t
T6n
HZ (MAX)
D
t
RPST
OUT
Auto Precharge
NOP
T7
1
Transitioning Data
ACTIVE
Bank x
Row
Row
T8
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