MT46V8M16TG-75EIT Micron Technology Inc, MT46V8M16TG-75EIT Datasheet - Page 53

• Manufacturer Part Number: MT46V8M16TG-75EIT
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V8M16TG-75EIT

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 750ps
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 140mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Not Compliant

Figure 26:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
Consecutive READ Bursts
Notes:
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
DQS
DQS
DQS
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
the first).
ing DO b.
Bank,
Bank,
READ
Col n
READ
Bank,
READ
Col n
Col n
T0
T0
T0
CL = 2
t
NOP
NOP
NOP
AC,
T1
T1
T1
CL = 2.5
t
DQSCK, and
CL = 3
53
Bank,
Col b
Bank,
Bank,
READ
Col b
Col b
READ
READ
T2
T2
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
DO
n
T2n
T2n
128Mb: x4, x8, x16 DDR SDRAM
DO
n
T3
NOP
T3
NOP
T3
NOP
DON’T CARE
DO
n
T3n
T3n
T3n
©2004 Micron Technology, Inc. All rights reserved.
T4
NOP
T4
T4
NOP
NOP
DO
b
TRANSITIONING DATA
T4n
T4n
T4n
DO
b
Operations
T5
NOP
T5
T5
NOP
NOP
DO
b
T5n
T5n
T5n