DS1248Y-70+ Dallas Semiconductor, DS1248Y-70+ Datasheet - Page 7
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DS1248Y-70+
Manufacturer Part Number
DS1248Y-70+
Description
PHNTHM RTC MOD 128K X 8 70NS
Manufacturer
Dallas Semiconductor
Datasheet
1.DS1248Y-70.pdf
(8 pages)
Specifications of DS1248Y-70+
Capacitance, Input
5 pF
Capacitance, Output
5 pF
Current, Input, Leakage
±1 μA
Current, Operating
85 mA
Current, Output, Leakage
±1
Data Retention
10 yrs.
Density
1024K
Interface
Parallel Bus
Memory Type
Non-Volatile SRAM
Organization
128K×8
Package Type
EDIP
Temperature, Operating
0 to +70 °C
Time, Access
70 ns
Time, Address Hold
5
Time, Fall
5 ns
Time, Rise
5 ns
Voltage, Input, High
5.3 V
Voltage, Input, Low
0.8 V
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part
POWER-DOWN/POWER-UP TIMING
Over the Operating Range (3.3V)
CE at V
V
V
V
V
CE at V
(T
Expected Data-Retention Time
Warning: Under no circumstances are negative undershoots, of any amplitude, allowed when
device is in battery-backup mode.
MEMORY READ CYCLE (Note 1)
CC
PF(MIN)
CC
PF(MIN)
A
= +25°C)
Slew from V
Slew from V
(CE at V
(CE at V
IH
IH
before Power-Down
after Power-Up
PARAMETER
PARAMETER
IH
IH
PF(MAX)
PF(MAX)
)
)
to
to
SYMBOL
SYMBOL
t
t
t
REC
t
t
DR
PD
R
F
13 of 18
MIN
MIN
300
1.5
10
0
0
TYP
TYP
MAX
MAX
2.5
UNITS
UNITS
years
ms
ms
ms
ms
NOTES
NOTES
9