DS1248Y-70+ Dallas Semiconductor, DS1248Y-70+ Datasheet - Page 4
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DS1248Y-70+
Manufacturer Part Number
DS1248Y-70+
Description
PHNTHM RTC MOD 128K X 8 70NS
Manufacturer
Dallas Semiconductor
Datasheet
1.DS1248Y-70.pdf
(8 pages)
Specifications of DS1248Y-70+
Capacitance, Input
5 pF
Capacitance, Output
5 pF
Current, Input, Leakage
±1 μA
Current, Operating
85 mA
Current, Output, Leakage
±1
Data Retention
10 yrs.
Density
1024K
Interface
Parallel Bus
Memory Type
Non-Volatile SRAM
Organization
128K×8
Package Type
EDIP
Temperature, Operating
0 to +70 °C
Time, Access
70 ns
Time, Address Hold
5
Time, Fall
5 ns
Time, Rise
5 ns
Voltage, Input, High
5.3 V
Voltage, Input, Low
0.8 V
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part
DC ELECTRICAL CHARACTERISTICS
Over the Operating Range (3.3V)
Input Leakage Current
I/O Leakage Current
CE ³ V
Output Current at 2.4V
Output Current at 0.4V
Standby Current CE = 2.2V
Standby Current
CE = V
Operating Current t
Write Protection Voltage
Battery Switchover Voltage
CAPACITANCE
(T
Input Capacitance
Input/Output Capacitance
MEMORY AC ELECTRICAL CHARACTERISTICS
Over the Operating Range (5V)
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High-Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from WE
Output Active from WE
Data Setup Time
Data Hold Time from WE
A
= +25°C)
PARAMETER
PARAMETER
IH
CC
≤ V
- 0.5V
PARAMETER
CC
CYC
= 70ns
SYMBOL
SYMBOL
I
I
I
V
C
V
C
I
CCS1
CCS2
CC01
I
I
I
OH
OL
IO
IL
I/O
SO
PF
IN
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
ODW
OEW
t
t
t
t
ACC
COE
WC
AW
WR
CO
OD
OH
WP
DH
RC
OE
DS
MIN
MIN
2.80
10 of 18
-1.0
-1.0
-1.0
2.0
MIN
70
70
50
30
5
5
0
0
5
5
DS1248Y-70
V
TYP
TYP
2.86
BAT
V
2.0
5
5
5
PF
or
MAX
70
35
70
25
25
MAX
MAX
+1.0
+1.0
2.97
3.0
50
10
10
7
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNITS
UNITS
mA
mA
mA
mA
mA
pF
pF
mA
mA
V
V
NOTES
NOTES
NOTES
5
5
3
5
5
4
4
12
11
11