NAND512W3A2DN6E Micron Technology Inc, NAND512W3A2DN6E Datasheet - Page 51

• Manufacturer Part Number: NAND512W3A2DN6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512W3A2DN6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

NAND512xxA2D, NAND01GxxA2C
12
Table 24.
1. 1-Gbit devices are only available in the TSOP48 package.
Note:
Example:
Device type
NAND = NAND flash memory
Density
512 = 512 Mbits
01G = 1 Gbit
Operating voltage
R = V
W = V
Bus width
3 = x8
4 = x16
Family identifier
A = 528-byte/ 264-word page
Device options
0 = no option (Chip Enable ‘care’; sequential row read enabled)
2 = Chip Enable don’t care enabled
Product version
C = third version (only for 1-Gbit devices)
D = fourth version (only for 512-Mbit devices)
Package
N = TSOP48 12 x 20 mm
ZA = VFBGA63 9 x 11 x 1.05 mm
Temperature range
6 = –40 to 85 °C
Option
E = RoHS compliant package, standard packing
F = RoHS compliant package, tape & reel packing
DD
DD
= 1.7 to 1.95 V
= 2.7 to 3.6 V
(1)
Ordering information
Ordering information scheme
Not all combinations are necessarily available. For a list of available devices or for further
information on any aspect of these products, please contact your nearest Numonyx sales
office.
NAND512W3A
2
D
Ordering information
N
6
E
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