NAND512W3A2DN6E Micron Technology Inc, NAND512W3A2DN6E Datasheet - Page 46

• Manufacturer Part Number: NAND512W3A2DN6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512W3A2DN6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

DC and AC parameters
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Figure 31. Ready/Busy AC waveform
Figure 32. Ready/Busy load circuit
ready V DD
DEVICE
V SS
V DD
3.3 V device - V OL : 0.4 V, V OH : 2.4 V
1.8 V device - V OL : 0.1 V, V OH : V DD - 0.1 V
t f
V OL
busy
R P
Open Drain Output
RB
NAND512xxA2D, NAND01GxxA2C
t r
ibusy
V OH
AI07563B
NI3087