K4S641632N-LC75000 Samsung Semiconductor, K4S641632N-LC75000 Datasheet - Page 8

• Manufacturer Part Number: K4S641632N-LC75000
• Manufacturer: Samsung Semiconductor
• Type: SDRAMr

Specifications of K4S641632N-LC75000

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 6/4.5ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 110mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Note :
8.0 Absolute Maximum Ratings
9.0 DC Operating Conditions
10.0 Capacitance
Recommended operating conditions (Voltage referenced to V
K4S640832N
K4S641632N
Notes :
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x8 : DQ0 ~ DQ7), (x16 : DQ0 ~DQ15)
Permanent device damage may occur if "ASOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
supply relative to V
IN
Pin
≤ V
SS
DDQ
.
SS
V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
DD
IN
T
Min
-0.3
, V
3.0
2.0
2.4
-10
I
, V
P
STG
OS
-
D
OUT
DDQ
SS
Symbol
C
C
C
8 of 15
= 0V, TA = 0 to 70°C)
C
ADD
OUT
CLK
IN
Typ
3.3
3.0
0
-
-
-
Min
2.5
2.5
2.5
4.0
V
-55 ~ +150
DD
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
10
Value
-
+0.3
50
1
Max
4.0
5.0
5.0
6.5
Synchronous DRAM
Rev. 1.12 August 2008
(V
DD
Unit
uA
V
V
V
V
V
= 3.3V, T
Unit
pF
pF
pF
pF
A
= 23°C, f = 1MHz)
I
I
OH
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
1
2
3
Note