SC403MLTRT Semtech, SC403MLTRT Datasheet - Page 3

• Manufacturer Part Number: SC403MLTRT
• Manufacturer: Semtech

Specifications of SC403MLTRT

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Absolute Maximum Ratings
LX to PGND (V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +30
LX to PGND (V) (transient — 100ns max.) . . . . . . -2 to +30
VIN to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +30
EN/PSV, PGOOD, ILIM, to GND (V) . . . . . . -0.3 to +(V
SS, VOUT, FB, FBL, to GND (V) . . . . . . . . . -0.3 to +(V
VDD to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6
TON to AGND (V). . . . . . . . . . . . . . . . . . . . . -0.3 to +(VDD - 1.5)
ENL (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to V
BST to LX (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6.0
BST to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +35
AGND to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +0.3
ESD Protection Level
Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters
specified in the Electrical Characteristics section is not recommended.
NOTES:
(1) Tested according to JEDEC standard JESD22-A114.
(2) Calculated from package in still air, mounted to 3 x 4.5 (in), 4 layer FR4 PCB with thermal vias under the exposed pad per JESD51 standards.
Unless specified: V
Electrical Characteristics
Parameter
Input Supplies
VIN UVLO Threshold
VIN UVLO Hysteresis
VDD UVLO Threshold
VDD UVLO Hysteresis
VIN Supply Current
IN
=12V, T
(1)
(1)
A
(kV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
= +25°C for Typ, -40 to +85 °C for Min and Max, T
DD
DD
Standby mode; ENL=V
Measured at VDD pin, falling edge
Measured at VDD pin, rising edge
+ 0.3)
+ 0.3)
Sensed at ENL pin, falling edge
Sensed at ENL pin, rising edge
ENL , EN/PSV = 0V, V
IN
EN/PSV = High
Conditions
Recommended Operating Conditions
Input Voltage (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 to 28
VDD to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 to 5.5
VOUT to PGND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75 to 5.5
Thermal Information
Storage Temperature (°C) . . . . . . . . . . . . . . . . . . . . -60 to +150
Maximum Junction Temperature (°C) . . . . . . . . . . . . . . . 150
Operating Junction Temperature (°C) . . . . . . -40 to +125
Thermal resistance, junction to ambient
Peak IR Reflow Temperature (°C) . . . . . . . . . . . . . . . . . . . . 260
J
< 125°C, V
High-side MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Low-side MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
PWM controller and LDO thermal resistance . . . . . 36
DD
, EN/PSV = 0V
IN
= 16V
DD
= +5V, per applicable Detailed Application Circuit
2.235
Min
2.40
2.5
2.4
Typ
2.60
2.40
130
0.2
0.2
8.5
(2)
(°C/W)
2.565
Max
2.95
3.0
2.9
20
SC403
Units
μA
V
V
V
V
3